• DocumentCode
    2216170
  • Title

    Study on tunneling current through barrier height using scanning tunneling microscopy

  • Author

    Lee, Nam-Suk ; Qian, Dong-Jin ; Shin, Hoon-Kyu ; Kwon, Young-Soo

  • Author_Institution
    Dept. of Electr. Eng., Dong-A Univ., Busan
  • Volume
    1
  • fYear
    2006
  • fDate
    22-25 Oct. 2006
  • Firstpage
    570
  • Lastpage
    571
  • Abstract
    The electrical properties of viologen derivatives were studied of the tunneling current characteristics on the length of the viologen derivatives using self-assembling techniques and ultra high vacuum scanning tunneling microscopy (UHV-STM). The current-voltage (I-V) and differential conductance (dl/dV-V) characteristics were measured while the electrical properties of the formed monolayer were scanned by using a scanning tunneling spectroscopy (STS). Also, we investigated to study electrons movement which is caused by height variation because we can see the organic materials barrier height and STM tip by organic materials energy gap (Eg). The total effective barrier height Phi of viologen derivatives VC8SH, VC10SH, HSC8VC8SH, and HSC10VC10SH SAMs were calculated to be 1.076 eV, 1.86 eV, 1.85 eV, 2.28 eV, respectively.
  • Keywords
    electric properties; monolayers; scanning tunnelling microscopy; scanning tunnelling spectroscopy; self-assembly; barrier height; current-voltage characteristics; differential conductance characteristics; electrical properties; organic materials energy gap; scanning tunneling spectroscopy; self-assembled monolayer; self-assembling techniques; tunneling current characteristics; ultra high vacuum scanning tunneling microscopy; viologen derivatives; Current measurement; Electric variables measurement; Electrons; Microscopy; Organic materials; Sociotechnical systems; Spectroscopy; Tunneling; Vacuum technology; Virtual colonoscopy; barreir height; decay constants; scanning tunneling microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
  • Conference_Location
    Gyeongju
  • Print_ISBN
    978-1-4244-0540-4
  • Electronic_ISBN
    978-1-4244-0541-1
  • Type

    conf

  • DOI
    10.1109/NMDC.2006.4388907
  • Filename
    4388907