Title :
Characterization of polysilicon contacts by photoconductance measurements
Author :
Jalali, B. ; Yang, E.S.
Author_Institution :
Microelectron. Sci. Lab., Columbia Univ., New York, NY, USA
Abstract :
The confinement property of polysilicon contacts, leading to storage of minority carriers, has been studied using the photoconductivity technique. Steady-state and transient optical measurement show a considerable increase of stored carriers by these contacts. A model has been developed that allows the extraction of contact parameters
Keywords :
bipolar transistors; elemental semiconductors; minority carriers; photoconductivity; semiconductor-metal boundaries; silicon; Si; bipolar transistor; confinement property; minority carrier storage; photoconductance; photoconductivity; polysilicon contacts; transient optical measurement; Carrier confinement; Delay; Detectors; Diode lasers; Microelectronics; Optical pulse generation; Photoconductivity; Pulse modulation; Steady-state; Transient response;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1988.51062
