Title :
The effect of emitter sidewall isolation on the emitter junction in a double layer polysilicon bipolar process
Author :
Wilson, M.C. ; Gold, D. ; Hunt, P.C. ; Booker, G.R.
Author_Institution :
Plessey Res. Ltd., Towcester, UK
Abstract :
The 2D equi-concentration dopant contours are revealed for the first time for a cross-section through a 1 μm double-layer polysilicon bipolar device. The planarity of the emitter junction is shown to be dependent on the presence of emitter sidewall spacer filters. Implications for ultrashallow junction devices are presented
Keywords :
bipolar integrated circuits; doping profiles; elemental semiconductors; integrated circuit technology; silicon; 1 micron; 2D equi-concentration dopant contours; Si; double layer polysilicon bipolar process; emitter junction; emitter sidewall isolation; spacer filters; ultrashallow junction devices; Chemicals; Circuits; Dielectrics; Electron emission; Electron microscopy; Etching; Inorganic materials; Protection; Silicon; Transmission electron microscopy;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1988.51063
