DocumentCode
2216381
Title
Study of a novel silicon micromachined gyroscope
Author
Xiong, Bin ; Wang, Yuelin ; Huang, Xiaozhen ; Che, Lufeng ; Wang, Weiyuan
Author_Institution
State Key Lab. of Transducer Technol., Acad. Sinica, Shanghai, China
Volume
2
fYear
2001
fDate
22-25 Oct. 2001
Firstpage
746
Abstract
A novel gyroscope with the same Q-factor of detecting mode and driving mode was designed. The device structure which we called "fence gyro" consists of a proof mass with bats linked up to substrate by suspending springs. The calculated result shows that the device has its Q-factor of detecting mode and driving mode in almost same order of 140 at atmospheric pressure. The devices are fabricated by silicon-glass wafer bonding and deep reactive ion etching technology.
Keywords
Q-factor; elemental semiconductors; gyroscopes; micromachining; micromechanical devices; microsensors; silicon; sputter etching; wafer bonding; Q-factor; Si; atmospheric pressure; deep reactive ion etching technology; detecting mode; driving mode; fence gyro; gyroscope; proof mass; silicon micromachined gyroscope; silicon-glass wafer bonding; suspending springs; Bars; Damping; Electrodes; Etching; Gyroscopes; Q factor; Silicon; Springs; Voltage; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.982002
Filename
982002
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