DocumentCode :
2216381
Title :
Study of a novel silicon micromachined gyroscope
Author :
Xiong, Bin ; Wang, Yuelin ; Huang, Xiaozhen ; Che, Lufeng ; Wang, Weiyuan
Author_Institution :
State Key Lab. of Transducer Technol., Acad. Sinica, Shanghai, China
Volume :
2
fYear :
2001
fDate :
22-25 Oct. 2001
Firstpage :
746
Abstract :
A novel gyroscope with the same Q-factor of detecting mode and driving mode was designed. The device structure which we called "fence gyro" consists of a proof mass with bats linked up to substrate by suspending springs. The calculated result shows that the device has its Q-factor of detecting mode and driving mode in almost same order of 140 at atmospheric pressure. The devices are fabricated by silicon-glass wafer bonding and deep reactive ion etching technology.
Keywords :
Q-factor; elemental semiconductors; gyroscopes; micromachining; micromechanical devices; microsensors; silicon; sputter etching; wafer bonding; Q-factor; Si; atmospheric pressure; deep reactive ion etching technology; detecting mode; driving mode; fence gyro; gyroscope; proof mass; silicon micromachined gyroscope; silicon-glass wafer bonding; suspending springs; Bars; Damping; Electrodes; Etching; Gyroscopes; Q factor; Silicon; Springs; Voltage; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
Type :
conf
DOI :
10.1109/ICSICT.2001.982002
Filename :
982002
Link To Document :
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