The two dimensional eelectron gas in BST/Al0.3Ga0.7N/GaN double heterostructure

Author

Liu, Ying ; Yang, Chuanren ; Zhang, Jihua ; Wu, Song ; Chen, Hongwei

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2009

fDate

25-27 Sept. 2009

Firstpage

176

Lastpage

179

Abstract

In this paper, we take account of spontaneous and piezoelectric polarization effect of BST and AlGaN. At the hetero-interface in BST/ Al_0.3Ga_0.7N /GaN double heterostructure, one-dimensional Poisson-Schrodinger equation using nonuniform mesh are solved self-consistently in dependence of the polarization and thickness of BST and the thickness of AlGaN barrier layer. BST/Al_0.3Ga_0.7N/GaN double heterostructure conduction band and the two-dimensional electron gas(2DEG) density are investigated. The results indicate that the 2DEG density of BST/Al_0.3Ga_0.7N/GaN is larger than that of Al_0.3Ga_0.7N/GaN, for a 8nm BST on AlGaN/GaN structure, the 2DEG density reached 1.85times10¹³ cm^-2, which is 23% higher than that of AlGaN/GaN structure.

Keywords

III-V semiconductors; Poisson equation; Schrodinger equation; aluminium compounds; barium compounds; conduction bands; dielectric polarisation; gallium compounds; piezoelectric materials; semiconductor heterojunctions; semiconductor-insulator boundaries; strontium compounds; two-dimensional electron gas; wide band gap semiconductors; 1D Poisson-Schrodinger equation; 2DEG density; Ba_xSr_1-xTiO₃-Al_0.3Ga_0.7N-GaN; barrier layer thickness; double heterostructure conduction; heterointerface; piezoelectric material; piezoelectric polarization effect; spontaneous polarization effect; two dimensional electron gas; Aluminum gallium nitride; Binary search trees; Capacitive sensors; Electrons; Ferroelectric materials; Gallium nitride; Optical polarization; Piezoelectric polarization; Poisson equations; Road transportation; 2 DEG; AlGaN; BST; GaN; heterostructure; polarizatio;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Superconductivity and Electromagnetic Devices, 2009. ASEMD 2009. International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-3686-6

Electronic_ISBN

978-1-4244-3687-3

Type

conf

DOI

10.1109/ASEMD.2009.5306665

Filename

5306665