An effective method to increase sensitivity and stability of the integrated gas sensor with sensing film annealing at higher temperature

Author

Yan, Gui-Zhen ; Chan, Phillip C H ; Sin, Johnny K O ; Hsing, I-Ming ; Wang, Yang-Yuan

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

773

Abstract

This paper presents a new type of silicon based integrated gas sensor using tin oxide film, which has been successfully designed and fabricated using the surface micromachining technique. In order to find out the optimal annealing condition, the sensing films in the integrated gas sensor devices were annealed at different temperature. The annealing temperature of 700°C was the best for high sensitivity and stability of die sensing film. The grain size and atomic concentration of the tin oxide were analysed.

Keywords

annealing; elemental semiconductors; gas sensors; grain size; micromachining; semiconductor materials; semiconductor thin films; silicon; tin compounds; 700 degC; Si; annealing; atomic concentration; grain size; integrated gas sensor; oxide film; surface micromachining; Annealing; Gas detectors; Grain size; Integrated circuit interconnections; Metallization; Semiconductor films; Silicon; Stability; Temperature sensors; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982009

Filename

982009