Title :
Characterization of domain switching behavior of MTJ cells using magnetic force microscopy(MFM) and H-R loop analysis
Author :
Heo, Jinhee ; Kim, Kyohyeok ; Kim, Taewan ; Chung, Ilsub
Author_Institution :
SungKyunKwan Univ., Suwon
Abstract :
Correlationship between electrical and magnetic properties of magnetic tunnel junction (MTJ) for Magnetic Random Access Memory(MRAM) was studied. MTJ (Ta/NiFeCr/PtMn/CoFe/Ru/CoFe/AlOx/CoFe/NiFe/Ta) was analyzed utilizing H-R loop and MFM images. We verified that the kink in H-MR loop comes from the vortex domain of free layer. In addition, we also observed a close relationship between domain switching behavior and anomalous H-R curve. These results would be useful for characterization of MTJ cell, thereby optimizing the process to realize the ultra high density MRAM.
Keywords :
aluminium compounds; chromium alloys; cobalt alloys; iron alloys; magnetic domains; magnetic force microscopy; magnetic hysteresis; magnetic storage; magnetic switching; magnetic tunnelling; manganese alloys; nickel alloys; platinum alloys; ruthenium; tantalum; H-R loop analysis; MFM; RAM; Ta-NiFeCr-PtMn-CoFe-AlO-CoFe-NiFe-Ta; Ta-NiFeCr-PtMn-CoFe-AlO-CoFe-NiFe-Ta - Interface; domain switching; magnetic force microscopy; magnetic random access memory; magnetic tunnel junction; vortex domain; Image analysis; Magnetic analysis; Magnetic domains; Magnetic fields; Magnetic force microscopy; Magnetic forces; Magnetic switching; Magnetic tunneling; Scanning probe microscopy; Switches; MFM; MRAM; MTJ; vortex;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388931
