Title :
GHz on-silicon-wafer probing calibration methods
Author :
Fraser, Arthur ; Gleason, Reed ; Strid, E.W.
Author_Institution :
Cascade Microtech Inc., Beaverton, OR, USA
Abstract :
Three calibration/correction techniques for on-silicon-wafer S-parameter measurements to 18 GHz were assessed by comparing calibration standards on sapphire and silicon. The effect of these techniques was evaluated by measuring large and small devices, connected to large and small pads. Equivalent circuit models for the calibration standards on silicon are presented. In addition, a new technique for on-wafer S-parameter measurements of backside collector devices is presented
Keywords :
S-parameters; bipolar integrated circuits; calibration; microwave integrated circuits; microwave measurement; probes; 18 GHz; Al2O3; S-parameter measurements; Si wafer probing calibration methods; backside collector devices; bipolar circuits; calibration standards; equivalent circuit models; microwave measurement; Admittance measurement; Bonding; Calibration; Gallium arsenide; Integrated circuit measurements; Integrated circuit modeling; Parasitic capacitance; Probes; Scattering parameters; Silicon;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1988.51067
