• DocumentCode
    2216845
  • Title

    Electrical characteristics of nano-crystal Si particles for nano floating gate memory

  • Author

    Yang, Jin Seok ; Kim, Seong-II ; Kim, Yong Tae ; Cho, Woon Jo ; Park, Jung Ho

  • Author_Institution
    Dept. of Electron. & Comput. Eng., Korea Univ., Seoul
  • Volume
    1
  • fYear
    2006
  • fDate
    22-25 Oct. 2006
  • Firstpage
    628
  • Lastpage
    629
  • Abstract
    Nonvolatile memory device was fabricated by using nano-crystal(NC)-Si particles. NC-Si particles had a wide size distribution of 1~5 nm and an average size of 2.7 nm, which were sufficiently small to indicate the quantum effect for silicon. The memory window was analyzed by C-V characteristic of NC-Si particles. Vd-Id, Vg-Id characteristics of the fabricated device were also measured.
  • Keywords
    nanoparticles; random-access storage; silicon; C-V characteristic; Si; Si - Element; electrical characteristics; nano floating gate memory; nanocrystal Si particles; nanocrystal silicon particles; nonvolatile memory device; quantum effect; size 2.7 nm; Capacitance-voltage characteristics; Electric variables; Electrons; Flash memory; Nanocrystals; Nanoparticles; Nanoscale devices; Nonvolatile memory; Silicon; Temperature; Nano Crystal (NC)-Si; non-volatile memory device;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
  • Conference_Location
    Gyeongju
  • Print_ISBN
    978-1-4244-0540-4
  • Electronic_ISBN
    978-1-4244-0541-1
  • Type

    conf

  • DOI
    10.1109/NMDC.2006.4388936
  • Filename
    4388936
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2216845