Title :
Electrical characteristics of nano-crystal Si particles for nano floating gate memory
Author :
Yang, Jin Seok ; Kim, Seong-II ; Kim, Yong Tae ; Cho, Woon Jo ; Park, Jung Ho
Author_Institution :
Dept. of Electron. & Comput. Eng., Korea Univ., Seoul
Abstract :
Nonvolatile memory device was fabricated by using nano-crystal(NC)-Si particles. NC-Si particles had a wide size distribution of 1~5 nm and an average size of 2.7 nm, which were sufficiently small to indicate the quantum effect for silicon. The memory window was analyzed by C-V characteristic of NC-Si particles. Vd-Id, Vg-Id characteristics of the fabricated device were also measured.
Keywords :
nanoparticles; random-access storage; silicon; C-V characteristic; Si; Si - Element; electrical characteristics; nano floating gate memory; nanocrystal Si particles; nanocrystal silicon particles; nonvolatile memory device; quantum effect; size 2.7 nm; Capacitance-voltage characteristics; Electric variables; Electrons; Flash memory; Nanocrystals; Nanoparticles; Nanoscale devices; Nonvolatile memory; Silicon; Temperature; Nano Crystal (NC)-Si; non-volatile memory device;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0540-4
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388936
