Copper-phthalocyanine based organic thin film transistor

Author

Kwak, T.H. ; Kang, H.S. ; Kim, K. ; Cho, M.Y. ; Lee, J.W. ; Joo, J.

Author_Institution

Dept. of Phys., Korea Univ., Seoul

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

630

Lastpage

631

Abstract

Copper-phthalocyanine based organic thin film transistors (OTFTs) were fabricated. Cu-Pc thin films as an active layer were deposited onto the SiO₂ layer as a gate insulator by using organic molecular beam deposition system. The OTFT devices showed p-type characteristics with field-effect mobility and threshold voltage as 1.22x10^-3 cm²/Vsand -40 V, respectively. The activation energy was estimated to be 0.073 eV, through the temperature dependence of carrier mobility.

Keywords

insulators; molecular beam epitaxial growth; organic semiconductors; thin film transistors; activation energy; carrier mobility; copper-phthalocyanine; field-effect mobility; gate insulator; organic molecular beam deposition system; organic thin film transistor; threshold voltage; Chemicals; Crystallization; Insulation; Organic thin film transistors; Scanning electron microscopy; Sputtering; Surface morphology; Temperature dependence; Thin film transistors; X-ray scattering; carrier mobility; copper-phthalocyanine; organic thin film transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0540-4

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388937

Filename

4388937