Nanomaterial fabrication by Ru atomic layer deposition on anodic aluminum oxide nanotemplate

Author

Woo-Hee Kim ; Park, Sang-Joon ; Kim, H.

Author_Institution

Dept. of Mater. Sci. & Eng., POSTECH, Pohang

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

636

Lastpage

637

Abstract

Ru Atomic layer deposition (ALD) and anodic aluminum oxide (AAO) process were studied for fabrication of one dimensional metallic nanostructure. Low resistivity and very pure ruthenium thin films were deposited from bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)₂] by thermal atomic layer deposition (ALD) using oxygen (O₂) gas and plasma-enhanced ALD (PE-ALD) using ammonia (NH₃) plasma. In addition, regularly ordered porous anodic aluminum oxide nanotemplates were fabricated on aluminum plate and Al film by multistep-step anodization method. The process conditions for Ru ALD process to fabricate metallic nanostructure by filling the nanotemplates were investigated.

Keywords

aluminium compounds; anodisation; atomic layer deposition; nanoporous materials; nanotechnology; ruthenium; thin films; Ru atomic layer deposition; ammonia plasma; bis(ethylcyclopentadienyl)ruthenium; metallic nanostructure; multistep-step anodization method; nanomaterial fabrication; oxygen gas; plasma-enhanced ALD; porous anodic aluminum oxide nanotemplates; ruthenium thin films; thermal atomic layer deposition; Aluminum oxide; Argon; Atomic layer deposition; Conductivity; Fabrication; Plasma temperature; Semiconductor films; Sputtering; Substrates; Thermal resistance; AAO; atomic layer deposition; ruthenium;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0540-4

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388940

Filename

4388940