DocumentCode
2217104
Title
A Fast Switching, High Isolation Absorptive SPST SiGe Switch for 24GHz Automotive Applications
Author
Gresham, Ian ; Jenkins, Alan
Author_Institution
M/A-COM Inc., Corporate Research & Development, Pawtucket Boulevard, Lowell, MA 01853 USA
fYear
2003
fDate
Oct. 2003
Firstpage
903
Lastpage
906
Abstract
Measured results for a high isolation, extremely fast switching SPST SiGe switch are presented. The switch provides ~35dB of isolation between input and output over 15GHz-26GHz, yet is only 500¿m à 250¿m in size. A novel load circuit ensures that there is almost no perceptible change in the input reflection coefficient of the switch between the transmission and the absorptive state. In the transmit state the switch provides gain for the input signal between 14.2GHz and 25.5GHz, and has a 1dB loss bandwidth of over 12GHz. Lastly, the use of a constant current biasing scheme allows extremely fast switching between states allowing the switch to be used to generate RF pulses of 200pS in length at a carrier frequency of 24GHz, with rise and fall times of approximately 60pS. The entire switch, including biasing circuitry, requires only 12mA from a +5V supply.
Keywords
Automotive applications; Bandwidth; Germanium silicon alloys; Propagation losses; Pulse generation; Radio frequency; Reflection; Silicon germanium; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003 33rd European
Conference_Location
Munich, Germany
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMA.2003.341108
Filename
4143164
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