HiSIM: The first complete drift-diffusion MOSFET model for circuit simulation

Today´s drift-approximation-based MOSFET models for circuit simulation face increasing difficulties to deliver numerical efficacy and accurate description of new physical phenomena arising as technology approaches the 100nm node. A break-through to a new model-generation, preferably based on the drift-diffusion approximation and a surface-potential description, will be necessary to ensure design reliability. HiSIM (H_i_roshima University S_TARC I_GFET M_odel) is the first of these new-generation MOSFET models.