Modeling of front and back gate surface potential of deep-submicro FD-SOI MOSFET

This paper extracts the 2D Poisson equation in the subthreshold area by means of a quasi-tripod approximation of longitudinal potential distribution in the silicon film of a FD-SOI device; thus the formulas of both front and back interface of FD-SOI device are obtained. Through the introduction of modified parameters the thesis constructs the surface potential model of the front/back interface of the deep submicron FD device. The model can directly reflect DIBL effect, all of the model formulas are based on physics, and non-infinite series or iterative processes need to be led in, so it has little calculating volume and is very suitable for EDA integrated device models.