Title :
Steady state and transient thermal analyses of GaAs pHEMT devices
Author :
Schwitter, Bryan K. ; Heimlich, Michael C. ; Fattorini, Anthony P. ; Tarazi, Jabra
Author_Institution :
Dept. of Electron. Eng., Macquarie Univ., Sydney, NSW, Australia
Abstract :
GaAs pHEMT thermal reliability test structures are introduced which incorporate on-wafer heating using Thin Film Resistors (TFR) and a DC gate metal temperature measurement method. Results from 3D Finite Element Method (FEM) thermal simulations are compared with measurements and used to investigate the frequency response of device self-heating. Comparisons are made with existing thermal models. The influence of individual device structures on the thermal characteristics of an entire device is investigated and the epitaxial layers are seen to have a large impact on overall performance. Bias dependent self-heating, independent of thermal dissipation is observed and attributed to confinement of the thermal source as the drain voltage is increased.
Keywords :
epitaxial layers; finite element analysis; frequency response; gallium arsenide; high electron mobility transistors; temperature measurement; thermal analysis; thin film resistors; transient analysis; 3D finite element method thermal simulations; DC gate metal temperature measurement method; FEM; GaAs; TFR; bias dependent self-heating; drain voltage; epitaxial layers; frequency response; individual device structures; on-wafer heating; pHEMT devices; steady state analyses; thermal characteristics; thermal dissipation; thermal reliability test structures; thermal source; thin film resistors; transient thermal analyses; Gallium arsenide; Heating; Logic gates; Metals; PHEMTs; Temperature measurement; Thermal test structure; pHEMT channel; temperature; temperature measurement; thermal modeling; wafer level;
Conference_Titel :
Wireless and Microwave Technology Conference (WAMICON), 2012 IEEE 13th Annual
Conference_Location :
Cocoa Beach, FL
Print_ISBN :
978-1-4673-0129-9
Electronic_ISBN :
978-1-4673-0128-2
DOI :
10.1109/WAMICON.2012.6208438
