DocumentCode
2217266
Title
A procedure to extract mobility degradation, series resistance and threshold voltage of SOI MOSFETs in the saturation region
Author
Ortiz-Conde, A. ; Sanchez, F. J Garcfa ; Cerdeira, A. ; Estrada, M. ; Flandre, D. ; Liou, J.J.
Author_Institution
Laboratorio de Electronica dal Estado Solido (LEES), Univ. Simon Bolivar, Caracas, Venezuela
Volume
2
fYear
2001
fDate
22-25 Oct. 2001
Firstpage
887
Abstract
Parasitic series resistance and mobility degradation are two important parameters for modeling and circuit simulation of MOSFETs. We present a new method to extract these two parameters from the current-voltage characteristics of SOI MOSFETs biased in the saturation region. This method is based on an integration function which reduces errors associated with the extraction procedure. Measured data and simulation results of SOI MOSFETs are used to test and verify the present method.
Keywords
MOSFET; carrier mobility; semiconductor device models; silicon-on-insulator; SOI MOSFETs; mobility degradation; parasitic series resistance; saturation region; threshold voltage; Circuit simulation; Circuit testing; Data mining; Degradation; Educational institutions; Electrical resistance measurement; Integrated circuit measurements; MOS devices; MOSFETs; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.982037
Filename
982037
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