DocumentCode :
2217303
Title :
Two-dimensional process simulation of bipolar devices using a multilayer simulator: IMPACT4
Author :
Baccus, B. ; Collard, D. ; Dubois, Eric ; Morel, D.
Author_Institution :
Inst. Superieur d´´Electron. du Nord, Lille, France
fYear :
1988
fDate :
12-13 Sep 1988
Firstpage :
164
Lastpage :
167
Abstract :
A new 2D multilayer process simulator specially developed for the study of advanced bipolar technologies is described. Numerical problems are presented and an application is introduced to demonstrate the possibilities of the program. The layer management is performed by the topology simulation module, according to the etching or deposition steps. The well-known string model is used and special algorithmic problems have been solved in order to take into account the general multilayer aspect. The compatibility with mesh generation has been also carefully studied: to avoid accuracy loss in the surface shape definition, the string model points are also the surface vertices of the FEM triangulation
Keywords :
VLSI; bipolar integrated circuits; digital simulation; electronic engineering computing; semiconductor device models; 2D multilayer process simulator; FEM triangulation; IMPACT4; VLSI; advanced bipolar technologies; deposition; etching; layer management; mesh generation; numerical problems; program; string model; surface shape definition; topology simulation module; Etching; Implants; Ion implantation; Jacobian matrices; Mesh generation; Nonhomogeneous media; Shape; Silicon; Topology; Vectors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988
Conference_Location :
Minneapolis, MN
Type :
conf
DOI :
10.1109/BIPOL.1988.51069
Filename :
51069
Link To Document :
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