Comparison simulation of well-tempered MOSFET´s by quantum mechanical and semi-classical approaches

A newly developed general purpose 2-D device simulator is used to simulate the well-tempered MOSFET´s provided by MIT website. In the new simulator the modified Airy function (MAF) method is used in solving the Schrodinger equation. Then 2-D model fully comprising the quantum mechanical effects (QMEs) in the whole channel region by self-consistent solution of Schrodinger, Poisson and carrier continuity equations are developed. The MOSFET´s are simulated by both quantum mechanical approach and semi-classical approach. The results show that for ultra-small devices, the output current degradation due to quantum mechanical effects (QMEs) can be very large.