Comparison simulation of well-tempered MOSFET´s by quantum mechanical and semi-classical approaches

Author

Ma, Yutao ; Chen, Lifeng ; Tian, Lilin ; Liu, Litian ; Li, Zhijian

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

905

Abstract

A newly developed general purpose 2-D device simulator is used to simulate the well-tempered MOSFET´s provided by MIT website. In the new simulator the modified Airy function (MAF) method is used in solving the Schrodinger equation. Then 2-D model fully comprising the quantum mechanical effects (QMEs) in the whole channel region by self-consistent solution of Schrodinger, Poisson and carrier continuity equations are developed. The MOSFET´s are simulated by both quantum mechanical approach and semi-classical approach. The results show that for ultra-small devices, the output current degradation due to quantum mechanical effects (QMEs) can be very large.

Keywords

MOSFET; Poisson equation; Schrodinger equation; quantum theory; semiconductor device models; 2D device simulator; MAF method; Poisson equation; Schrodinger equation; carrier continuity equations; modified Airy function method; output current degradation; quantum mechanical effects; quantum mechanical simulation; self-consistent solution; semi-classical simulation; ultra-small devices; well-tempered MOSFET; Degradation; Doping; Electrons; Energy states; MOSFET circuits; Poisson equations; Quantum mechanics; Schrodinger equation; Semiconductor process modeling; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982041

Filename

982041