DocumentCode :
2217391
Title :
Atomistic annealing simulation: kinetic lattice Monte Carlo
Author :
Min Yu ; Ru Huang ; Xing Zhang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Volume :
2
fYear :
2001
fDate :
22-25 Oct. 2001
Firstpage :
909
Abstract :
KLMC model has been presented as a detailed atomistic model, which is powerful for the study of diffusion. The improvement of KLMC is presented to simulate the annealing process. The cluster model is set up in the modified KLMC. Clusters are treated as individual objects, which can capture or emit free particles. Based on this model, the annealing simulation is successfully carried out. The evolution of defects in the annealing is studied. Moreover, the transient enhanced diffusion of boron after annealing, which is a limitation in shallow junction formation for sub 0.1 micron devices, is achieved from the annealing simulation. It indicates that the atomistic model is feasible in annealing process simulation.
Keywords :
Monte Carlo methods; annealing; boron; diffusion; interstitials; semiconductor junctions; KLMC model; atomistic annealing simulation; atomistic model; cluster model; defect evolution; kinetic lattice Monte Carlo; shallow junction formation; transient enhanced diffusion; Boron; Computational modeling; Crystallization; Kinetic theory; Lattices; Monte Carlo methods; Semiconductor process modeling; Silicon; Simulated annealing; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
Type :
conf
DOI :
10.1109/ICSICT.2001.982042
Filename :
982042
Link To Document :
بازگشت