DocumentCode
2217391
Title
Atomistic annealing simulation: kinetic lattice Monte Carlo
Author
Min Yu ; Ru Huang ; Xing Zhang
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
Volume
2
fYear
2001
fDate
22-25 Oct. 2001
Firstpage
909
Abstract
KLMC model has been presented as a detailed atomistic model, which is powerful for the study of diffusion. The improvement of KLMC is presented to simulate the annealing process. The cluster model is set up in the modified KLMC. Clusters are treated as individual objects, which can capture or emit free particles. Based on this model, the annealing simulation is successfully carried out. The evolution of defects in the annealing is studied. Moreover, the transient enhanced diffusion of boron after annealing, which is a limitation in shallow junction formation for sub 0.1 micron devices, is achieved from the annealing simulation. It indicates that the atomistic model is feasible in annealing process simulation.
Keywords
Monte Carlo methods; annealing; boron; diffusion; interstitials; semiconductor junctions; KLMC model; atomistic annealing simulation; atomistic model; cluster model; defect evolution; kinetic lattice Monte Carlo; shallow junction formation; transient enhanced diffusion; Boron; Computational modeling; Crystallization; Kinetic theory; Lattices; Monte Carlo methods; Semiconductor process modeling; Silicon; Simulated annealing; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.982042
Filename
982042
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