A new small-signal parameter extraction approach for SOI MOSFET

A new and accurate parameter extraction method for SOI MOSFET small-signal equivalent circuit is presented. The extrinsic elements including gate, source and drain series resistance inductance are extracted, and the results are used to de-embed the extrinsic equivalent circuit components from the intrinsic ones. In the meanwhile, a constant assumption for all intrinsic elements in the frequency band of interest is applied, which makes the extraction problem reduce to an optimization procedure. This approach is very efficient and needs no additional measurements. Good agreement is obtained between the simulation results and the measured data.