Electrical and structural properties of PZT/ST films

The heterolayered thick/thin structure consisting of Pb(Zr0.52Ti0.48)O3 (PZT) and SrTiO₃(ST) were fabricated by a sol-gel process. We investigated the effect of phase, composition, and interfacial state of SrTiO₃ thin films layer at interface between PZT thick films. The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel-prepared SrTiO₃ layer at interface of PZT thick films. The insertion of SrTiO₃ interlayer yielded PZT thick films with homogeneous and dense grain structure regardless of the number of SrTiO₃ layers. These results suggested that there is coexistence of PZT phase and SrTiO₃ phase or presence of the modified SrTiO₃ at the interfaces between PZT thick. The leakage current density of the PZT/SrTiO_3-7 film is less that 1.7 x 10^-9 A/cm² at S V.