• DocumentCode
    2217613
  • Title

    Characterization of Pd-nanocrystal-based nonvolatile memory devices

  • Author

    Seol, Kwang Soo ; Choi, Seong Jae ; Choi, Jae-Young ; Jang, Eun-Joo ; Kim, Byung-Ki ; Park, Sang-Jin ; Cha, Dea-Gil ; Jun, Shinae ; Park, Jong-Bong ; Park, Yoondong ; Choi, Suk-Ho

  • Author_Institution
    Samsung Adv. Inst. of Technol., Suwon
  • Volume
    1
  • fYear
    2006
  • fDate
    22-25 Oct. 2006
  • Firstpage
    704
  • Lastpage
    705
  • Abstract
    Charge loss rate of Pd-nanocrystal (NC)-based nonvolatile memories is reduced about 60% by employing an asymmetric tunnel barrier composed of stacked SiO2 and HfO2 layers or insulating ZrO2 NCs between Pd NCs.
  • Keywords
    MOS memory circuits; hafnium compounds; nanoelectronics; nanostructured materials; palladium; platinum; silicon compounds; tunnelling; zirconium compounds; Pd-SiO2-HfO2-Pd; Pd-SiO2-HfO2-Pd - Interface; Pd-ZrO2-Pd; Pd-ZrO2-Pd - Interface; asymmetric tunnel barrier; charge loss rate; nonvolatile memory devices; stacked layers; Capacitors; Electrodes; Hafnium oxide; Insulation; Nanocrystals; Nonvolatile memory; Physics; Scanning electron microscopy; US Department of Transportation; Voltage; Pd nanocrystal; ZrO2 nanocrystal; asymmetric tunnel barrier; nonvoltile memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
  • Conference_Location
    Gyeongju
  • Print_ISBN
    978-1-4244-0541-1
  • Electronic_ISBN
    978-1-4244-0541-1
  • Type

    conf

  • DOI
    10.1109/NMDC.2006.4388970
  • Filename
    4388970
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2217613