Extracting F-N stress-induced interface states in SOI NMOSFETs by forward gated-diode

Author

He, Jin ; Zhang, Xing ; Huang, Aihua ; Huang, Ru ; Wang, Yangyuan

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

946

Abstract

The forward gated-diode R-G current method has been used to monitor the F-N stressing-induced interface traps in NMOSFET/SOI in this paper. This simple and accurate experimental method can directly give the interface trap density induced by F-N stressing effect for characterizing the device´s reliability characteristics. For the measured NMOS/SOI device with a body structure, an expected power law relationship as ΔN_ii ∼t^0.4 between the pure F-N stressing-induced interface trap density and the accumulated stressing time is obtained.

Keywords

MOSFET; interface states; semiconductor device reliability; silicon-on-insulator; F-N stress-induced interface states; R-G current method; SOI NMOSFETs; Si; accumulated stressing time; body structure; forward gated-diode; interface trap density; reliability characteristics; Density measurement; Diodes; Interface states; MOSFET circuits; Monitoring; Power measurement; Roentgenium; Stress measurement; Time measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982051

Filename

982051