DocumentCode :
2217696
Title :
In-Line Monitoring of Hot Carrier Lifetime and Its Dependency on Process Parameter for Submicron High Density DRAM Manufacturing
Author :
Hong, S.C. ; Shin, D.H. ; Lee, W. ; Ryu, B.-I. ; Chung, H.K.
Author_Institution :
Samsung Electronics Co., Ltd.
fYear :
1993
fDate :
24-27 Oct 1993
Firstpage :
234
Lastpage :
235
Keywords :
Condition monitoring; Current measurement; Degradation; Drain avalanche hot carrier injection; Electric variables measurement; Hot carriers; Length measurement; MOSFETs; Stress measurement; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 1993 International
Type :
conf
DOI :
10.1109/IRWS.1993.666323
Filename :
666323
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2217696
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