• DocumentCode
    2217704
  • Title

    Thermal properties of quantum transition process in piezoelectric materials based on the projected Liouville equation.

  • Author

    Sug, Joung-Young ; Lee, Su-Ho ; Sa-Gong, Geon

  • Author_Institution
    Electron. & Electr. Eng. Sch., Kyungpook Nat. Univ., Taegu
  • Volume
    1
  • fYear
    2006
  • fDate
    22-25 Oct. 2006
  • Firstpage
    712
  • Lastpage
    713
  • Abstract
    We study the temperature dependence of the Cyclotron Resonance absorption Line Shapes(CRLS) and the Cyclotron Resonance Line Widths(CRLW) in piezoelectric materials, CdS and GaAs. We examined theoretically the CRLS and CRLW in the quantum limit due to piezoelectric phonon scattering. We use the projected Liouville equation method approach. Trough the numerical calculation of the result of the theory, we find that the width increases with the temperature in two materials. We also find that the temperature dependence of the CRLW of the phonon emission process is more larger than the temperature dependence of the CRLW of the phonon absorption process.
  • Keywords
    III-V semiconductors; Liouville equation; cadmium compounds; cyclotron resonance; gallium arsenide; piezoelectric materials; wide band gap semiconductors; CdS; CdS - Binary; GaAs; GaAs - Binary; cyclotron resonance absorption line shapes; cyclotron resonance line widths; phonon absorption; phonon emission; piezoelectric materials; piezoelectric phonon scattering; projected Liouville equation; quantum transition; temperature dependence; thermal properties; Absorption; Cyclotrons; Equations; Gallium arsenide; Particle scattering; Phonons; Piezoelectric materials; Quantum mechanics; Resonance; Temperature dependence; Electron piezoelectric phonon coupling system; Projected Liouville equation method; the Cyclotron Resonance Line Widths(CRLW); the Cyclotron Resonance absorption Line Shapes(CRLS);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
  • Conference_Location
    Gyeongju
  • Print_ISBN
    978-1-4244-0540-4
  • Electronic_ISBN
    978-1-4244-0541-1
  • Type

    conf

  • DOI
    10.1109/NMDC.2006.4388974
  • Filename
    4388974