DocumentCode
2217723
Title
1/f Noise Optimum for Field-Effect Transistors in Single-Ended Resistive Mixers
Author
Margraf, Michael ; Boeck, Georg
Author_Institution
Berlin University of Technology, Microwave Engineering Group, Secr. HFT 5-1, Einsteinufer 25, 10587 Berlin, Germany. Fax: (++49 30) 314-26893, Phone: (++49 30) 314-21034, E-Mail: margraf@mwt.ee.tu-berlin.de
fYear
2003
fDate
Oct. 2003
Firstpage
1015
Lastpage
1017
Abstract
The low-frequency noise in single-ended resistive FET mixers is investigated with respect to the influence of the gate-source voltage. Using a simple broadband mixer with a Fujitsu HEMT, measurement and simulation results are compared yielding good agreement. Two mechanisms exists that create 1/f-noise: The self-mixing process and the self-mixing current. Both cancel each other, i.e., there is a gate bias where a flicker noise minimum appears. The location of this minimum can be controlled with the DC output impedance.
Keywords
1f noise; Circuit noise; Coupling circuits; DC generators; FETs; Frequency; HEMTs; Low-frequency noise; Microwave technology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003 33rd European
Conference_Location
Munich, Germany
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMA.2003.340831
Filename
4143192
Link To Document