Double gate MOSFET based efficient wide band tunable power amplifiers

Performance, tunability and efficiency of double gate MOSFET (DG-MOSFET) based power amplifiers (PA) are investigated. Specifically, we propose two different wide-band PA topologies with 45 nm long DG-MOSFET and study their performance via computer simulations. The first one involves a modified Darlington cascode configuration with a peak gain of ~26 dB for a 3-dB bandwidth ≥ 30 GHz. The gain flatness is less than 20% in this range. The second topology reported is a three-stage common-source wide band PA that gives a peak gain of 8 dB in 60-90 GHz band. In both designs, one can utilize the back-gate bias for gain control of 10 dB and 6 dB, respectively, a unique capability not found in comparable amplifiers built with single gate MOSFET architectures. We also provide a comparison of the simulated performance figures of merit for the DG-MOSFET amplifiers with those reported for the conventional CMOS based PAs reported recently, which shows that proposed designs are either comparable or better than the standard CMOS counterparts in all figures of merits considered.