U- and V-band signal sources in Si/SiGe technology

Author

Su, Yinmei ; Liu, Gang ; Trasser, Andreas ; Schumacher, Hermann

Author_Institution

Inst. of Electron Devices & Circuits, Ulm Univ., Ulm, Germany

fYear

2011

fDate

27-28 Sept. 2011

Firstpage

1

Lastpage

4

Abstract

A U-band VCO and a V-band push-push frequency doubler are designed in a 0.25 μm SiGe:C BiCMOS technology. The VCO oscillates from 48GHz to 55 GHz, with an output power of around -1dBm and a phase noise of -84 dBc/Hz at 1MHz offset. The push-push frequency doubler has a minimum loss of 12 dB at 50 GHz for an input power of 6 dBm. It achieves an output power of -2.4dBm at 50 GHz and -5.8 dBm at 75GHz for an input power of 10 dBm. The VCO is biased at 4V consuming 36 mA, and the push-push doubler draws 9.4mA from a 2V supply.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; frequency multipliers; millimetre wave integrated circuits; voltage-controlled oscillators; BiCMOS technology; Si-SiGe; SiGe:C; U-band VCO; U-band signal source; V-band push-push frequency doubler; V-band signal source; current 36 mA; frequency 48 GHz to 55 GHz; frequency 50 GHz; loss 12 dB; output power; size 0.25 mum; voltage 4 V; Frequency measurement; Phase noise; Power generation; Power measurement; Transmission line measurements; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference Dresden (SCD), 2011

Conference_Location

Dresden

Print_ISBN

978-1-4577-0431-4

Type

conf

DOI

10.1109/SCD.2011.6068698

Filename

6068698