Title :
Growth and annealing temperature dependences of epitaxial ZnO thin films for optoelectronic applications
Author :
Shan, F.K. ; Liu, G.X. ; Lee, W.J. ; Shin, B.C.
Author_Institution :
DongEui Univ., Busan
Abstract :
Epitaxial ZnO thin films were deposited on sapphire (001) substrates at various temperatures by using pulsed laser deposition (PLD) system. An x-ray diffractometer (XRD) was used to investigate the structural properties of the thin films An atomic force microscope (AFM) was used to investigate the surface morphologies of the thin films. The surface roughness and grain size of the thin films increased with increasing growth temperature. A spectrometer was used to investigate the photoluminescent (PL) properties of the thin films. It was found that all the thin films showed two emissions. One was the near band edge (NBE) emission; the other was the broad deep-level (DL) emission.
Keywords :
X-ray diffraction; annealing; atomic force microscopy; epitaxial growth; photoluminescence; pulsed laser deposition; sapphire; surface morphology; surface roughness; thin films; zinc compounds; ZnO; ZnO - Interface; annealing temperature dependency; atomic force microscope; epitaxial thin films; grain size; pulsed laser deposition; sapphire (001); surface morphology; surface roughness; thin film growth; x-ray diffractometer; Annealing; Atomic force microscopy; Pulsed laser deposition; Rough surfaces; Sputtering; Surface morphology; Surface roughness; Temperature dependence; Transistors; Zinc oxide;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388975
