A physical model of the field dependence of two breakdown activation energies for TDDB

Author

Tan, Changhua ; Xu, Mingzhen

Author_Institution

Dept. of Comput. Sci. & Technol., Peking Univ., Beijing, China

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

967

Abstract

The field dependence of two breakdown activation energies for TDDB in ultra thin gate oxide is studied using a double level model of oxygen related donor states under high field stressing. The oxygen related donor generation is due to the high field induced multi-photons. Using a helium-like model, the double donor energies of E_c-0.91eV and E_c-2.00eV can be determined simply. The two zero field breakdown activation energies correspond to the two energy levels of a defect.

Keywords

defect states; dielectric thin films; electric breakdown; impurity states; oxygen; TDDB; breakdown activation energies; defect; double level model; energy levels; field dependence; helium-like model; high field induced multi-photons; high field stressing; oxygen related donor states; physical model; ultra thin gate oxide; zero field breakdown activation energies; Bonding; Computer science; Current density; Electric breakdown; Electrons; Equations; Helium; Temperature dependence; Temperature distribution; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982056

Filename

982056