DocumentCode :
22178
Title :
Performance Investigation of Amorphous InGaZnO Flexible Thin-Film Transistors Deposited on PET Substrates
Author :
Hsin-Ying Lee ; Wan-Yi Ye ; Yung-Hao Lin ; Ching-Ting Lee
Author_Institution :
Dept. of Photonics, Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
10
Issue :
9
fYear :
2014
fDate :
Sept. 2014
Firstpage :
792
Lastpage :
796
Abstract :
Amorphous indium gallium zinc oxide (a-InGaZnO) flexible thin-film transistors (TFTs) were deposited on polyethylene terephthalate (PET) substrates at low temperature using a triple-targets magnetron radio frequency (RF) cosputter system. During the deposition of InGaZnO films, triple targets of In2O3 target, Ga2O3 target, and Zn target were simultaneously sputtered. By varying the mixing gas ratios, the Ar/O2 ratio of 55 sccm/45 sccm was used as the sputtering gases to deposit the InGaZnO channel layer. The bottom-gate-type triple-targets InGaZnO flexible TFTs operated in n-type enhancement mode with a transconductance of 4.95×10-5 S, a field-effect mobility of 57.2 cm2/V·s, an on/off ratio of 4.19×107, a turn-on voltage of 0 V, a threshold voltage of 2.5 V, and a subthreshold swing of 0.23 V/decade, which were much better than those of the single InGaZnO target flexible TFTs.
Keywords :
field effect transistors; flexible electronics; gallium compounds; indium compounds; polymers; sputter deposition; thin film transistors; InGaZnO; PET substrate; RF cosputter system; amorphous flexible thin-film transistor deposition; bottom-gate-type triple-targets flexible TFT; field-effect mobility; mixing gas ratio; polyethylene terephthalate substrate; transconductance enhancement mode; triple-target magnetron radiofrequency cosputter system; voltage 2.5 V; Films; Logic gates; Positron emission tomography; Radio frequency; Substrates; Thin film transistors; Threshold voltage; Cosputter; InGaZnO; flexible substrate; polyethylene terephthalate (PET); thin-film transistors (TFTs);
fLanguage :
English
Journal_Title :
Display Technology, Journal of
Publisher :
ieee
ISSN :
1551-319X
Type :
jour
DOI :
10.1109/JDT.2014.2326883
Filename :
6822497
Link To Document :
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