Title :
Influence of trapped charges on low-level leakage current in thin silicon dioxide films
Author :
Chen, T.P. ; Luo, Y.L.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
In this work, experiments were designed to examine the influence of the trapped charges on SILC in thin SiO2 films. It is shown that the release of the trapped electrons in the gate/oxide interface region during the I-V measurement could be responsible for the negative-differential-resistance current at low fields. It is also shown that the positive trapped charges could enhance the DC component of the SILC.
Keywords :
dielectric thin films; electron traps; leakage currents; negative resistance; silicon compounds; DC component; I-V measurement; SILC; SiO2; SiO2 films; gate/oxide interface region; low field; low-level leakage current; negative-differential-resistance current; positive trapped charges; stress-induced leakage current; thin silicon dioxide films; trapped charges; trapped electrons; Current measurement; Design engineering; Electron traps; Leakage current; Physics; Q measurement; Semiconductor films; Silicon compounds; Stress measurement; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982058
