• DocumentCode
    2217849
  • Title

    Sub-micron silicon RF IC technologies: "an overview"

  • Author

    Lovelace, D.K. ; Finol, J.L. ; Durec, J.C.

  • Author_Institution
    Motorola Semicond. Products Sector, Tempe, AZ, USA
  • fYear
    1998
  • fDate
    11-8 June 1998
  • Firstpage
    317
  • Lastpage
    320
  • Abstract
    Silicon based semiconductors have become the standard active device technology of choice in today´s cost and performance driven consumer wireless products. No longer is silicon technology confined to low frequency analog and digital processing functions. Silicon devices have now reached high frequency performance levels which allow them to be used almost exclusively in the RF section of many wireless communication circuits. This paper deals with the issues involved in employing silicon IC technologies to low cost, low power, RF circuits.
  • Keywords
    UHF integrated circuits; elemental semiconductors; integrated circuit noise; integrated circuit technology; radio equipment; silicon; Si; low cost RF circuits; low power RF circuits; signal isolation; submicron Si RFIC technologies; wireless communication circuits; Costs; Cutoff frequency; Equations; MOSFET circuits; Radio frequency; Radiofrequency integrated circuits; Silicon; Temperature dependence; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE
  • Conference_Location
    Baltimore, MD, USA
  • ISSN
    1097-2633
  • Print_ISBN
    0-7803-4439-1
  • Type

    conf

  • DOI
    10.1109/RFIC.1998.682342
  • Filename
    682342