Title :
Sub-micron silicon RF IC technologies: "an overview"
Author :
Lovelace, D.K. ; Finol, J.L. ; Durec, J.C.
Author_Institution :
Motorola Semicond. Products Sector, Tempe, AZ, USA
Abstract :
Silicon based semiconductors have become the standard active device technology of choice in today´s cost and performance driven consumer wireless products. No longer is silicon technology confined to low frequency analog and digital processing functions. Silicon devices have now reached high frequency performance levels which allow them to be used almost exclusively in the RF section of many wireless communication circuits. This paper deals with the issues involved in employing silicon IC technologies to low cost, low power, RF circuits.
Keywords :
UHF integrated circuits; elemental semiconductors; integrated circuit noise; integrated circuit technology; radio equipment; silicon; Si; low cost RF circuits; low power RF circuits; signal isolation; submicron Si RFIC technologies; wireless communication circuits; Costs; Cutoff frequency; Equations; MOSFET circuits; Radio frequency; Radiofrequency integrated circuits; Silicon; Temperature dependence; Transconductance; Voltage;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4439-1
DOI :
10.1109/RFIC.1998.682342
