DocumentCode
2217849
Title
Sub-micron silicon RF IC technologies: "an overview"
Author
Lovelace, D.K. ; Finol, J.L. ; Durec, J.C.
Author_Institution
Motorola Semicond. Products Sector, Tempe, AZ, USA
fYear
1998
fDate
11-8 June 1998
Firstpage
317
Lastpage
320
Abstract
Silicon based semiconductors have become the standard active device technology of choice in today´s cost and performance driven consumer wireless products. No longer is silicon technology confined to low frequency analog and digital processing functions. Silicon devices have now reached high frequency performance levels which allow them to be used almost exclusively in the RF section of many wireless communication circuits. This paper deals with the issues involved in employing silicon IC technologies to low cost, low power, RF circuits.
Keywords
UHF integrated circuits; elemental semiconductors; integrated circuit noise; integrated circuit technology; radio equipment; silicon; Si; low cost RF circuits; low power RF circuits; signal isolation; submicron Si RFIC technologies; wireless communication circuits; Costs; Cutoff frequency; Equations; MOSFET circuits; Radio frequency; Radiofrequency integrated circuits; Silicon; Temperature dependence; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE
Conference_Location
Baltimore, MD, USA
ISSN
1097-2633
Print_ISBN
0-7803-4439-1
Type
conf
DOI
10.1109/RFIC.1998.682342
Filename
682342
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