A new charge-pumping measurement technique for lateral profiling of interface states and oxide charges in MOSFETs

In this article, a new direct charge pumping technique is proposed for extraction of spatial distributions of interface states and trapped oxide charges of MOSFETs after HCI (Hot-Carrier-Injection) degradation. This technique is fast and free of computer simulations. Complicated measurement setup is also avoided. This technique is based on a set of iterative computation steps that takes two sets of charge-pumping curves, one with fixed base voltage and varying top voltage, one with fixed top voltage and varying base voltage as its inputs. This technique has been used in the study of nonuniform MOSFETs degradations and proved to be efficient.