Hot carrier degradation in the integration of dual gate oxide transistor in sub-0.13um CMOS technology

Author

Jie, Xiaorui ; Zhang, Fubin ; Wu, Yongjun ; Moosa, Mohamed ; Song, Seung-Chul

Author_Institution

Digital DNA Labs., Motorola, Beijing, China

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

986

Abstract

Hot-carrier degradation is studied in 70A, 3.3V Dual Gate Oxide (DGO) transistors in sub-0.13um CMOS technology for embedded applications. The different device degradation characteristics induced by interface traps and interface charges are discussed. In addition, the competing effects of halo and extension implants on hot-carrier reliability in DGO transistors are investigated. Hot-carrier lifetime is found to increase with increased extension dose and angle, and to decrease with increased halo dose. However, the extension implant affects hot-carrier reliability more significantly in these DGO transistors.

Keywords

MOSFET; carrier lifetime; hot carriers; interface states; ion implantation; semiconductor device reliability; 0.13 micron; 3.3 V; 70 A; CMOS technology; dual gate oxide transistor; embedded integration; extension implant; halo implant; hot carrier degradation; hot carrier lifetime; hot carrier reliability; interface charge; interface trap; CMOS technology; Chaos; Degradation; Hot carrier effects; Hot carriers; Implants; Laboratories; MOSFET circuits; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982061

Filename

982061