Title :
The effect of high injection on the density of states of silicon
Author :
Lowney, Jeremiah R.
Author_Institution :
NBS, Gaithersburg, MD, USA
Abstract :
The effects of high-injection levels on the conduction and valence bands of silicon have been determined according to theory based on first principles. The results show important narrowing of the energy gap by the injected electron-hole plasma as well as a reduction in the dopant-carrier interaction because of a reduction in the free-carrier screening radius. Interestingly, these two effects tend to compensate each other somewhat in heavily doped and heavily injected material. Since the gain of a bipolar device is very sensitive to the bandgap, device models need to include these effects in order to model a device correctly throughout its operating regime
Keywords :
bipolar transistors; conduction bands; electronic density of states; elemental semiconductors; energy gap; heavily doped semiconductors; semiconductor device models; silicon; solid-state plasma; valence bands; Si; bipolar device; conduction bands; density of states; device models; dopant-carrier interaction; energy gap; free-carrier screening radius; gain; heavily doped material; high-injection levels; injected electron-hole plasma; operating regime; valence bands; Charge carrier processes; NIST; Plasma density; Plasma devices; Plasma materials processing; Plasma measurements; Plasma temperature; Silicon; Statistical distributions; Temperature distribution;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1988.51075
