Title :
Low frequency parasitic effects in RF transistors and their impact on power amplifier performances
Author :
Quéré, Raymond ; Sommet, Raphael ; Bouysse, Philippe ; Reveyrand, Tibault ; Barataud, Denis ; Teyssier, Jean Pierre ; Nébus, Jean Michel
Author_Institution :
XLIM/C2S2, Univ. of Limoges, Limoges, France
Abstract :
In this paper Low Frequency (LF) parasitic effects are assessed through three kinds of measurements. It is shown that LF S-parameters measurements allow to extract the thermal impedance of Heterojunction Bipolar Transistors (HBTs) and to put dispersive effects of AlGaN/GaN High Electron Mobility Transistors (HEMTs) into evidence. Large signal (RF pulsed and two tone intermodulation) confirm the impact of those parasitic effects on performances of Power Amplifiers.
Keywords :
III-V semiconductors; S-parameters; UHF bipolar transistors; UHF field effect transistors; UHF power amplifiers; aluminium compounds; gallium compounds; heterojunction bipolar transistors; high electron mobility transistors; microwave bipolar transistors; microwave field effect transistors; microwave power amplifiers; AlGaN-GaN; HBT; HEMT; RF pulsed signal; RF transistors; dispersive effects; heterojunction bipolar transistors; high electron mobility transistors; low frequency S-parameters; low frequency parasitic effect; power amplifier performances; thermal impedance; two tone intermodulation signal; Current measurement; Frequency measurement; Gallium nitride; HEMTs; MODFETs; Pulse measurements; Radio frequency; parasitic; pulses; thermal; traps; two-tone intermodulation;
Conference_Titel :
Wireless and Microwave Technology Conference (WAMICON), 2012 IEEE 13th Annual
Conference_Location :
Cocoa Beach, FL
Print_ISBN :
978-1-4673-0129-9
Electronic_ISBN :
978-1-4673-0128-2
DOI :
10.1109/WAMICON.2012.6208471
