Compact, infinite input resistance, wide receiving range, high-to-low voltage receiver circuits based on novel one-DMOS-FET linear level-shifting

Author

Zhang, Yipin ; Burghartz, Joachim N.

Author_Institution

Inst. for Microelectron. Stuttgart, Stuttgart, Germany

fYear

2011

fDate

27-28 Sept. 2011

Firstpage

1

Lastpage

4

Abstract

A novel, high-voltage (HV) to low-voltage (LV) linear level-shifting cell using only one DMOS Transistor and two resistors is presented. Its infinite input resistance, wide receiving range and linear HV-to-LV level-shifting characteristics make it very suitable to build CMOS/DMOS mixed-voltage receiver circuits for industrial applications. Based on the new cell, a compact, wide receiving range, differential input HV-to-LV digital receiver and a circuit arrangement for HV-to-LV analog signal transmission with optimized output swing are designed. Functionalities of the designed receivers are verified by extensive simulations and experimental measurements.

Keywords

MOS integrated circuits; field effect transistors; resistors; CMOS-DMOS mixed-voltage receiver circuits; DMOS transistor; compact receiver circuit; high-to-low voltage receiver circuit; infinite input resistance receiver circuit; linear level-shifting cell; one-DMOS-FET linear level-shifting; resistors; wide receiving range receiver circuit; CMOS integrated circuits; CMOS technology; Logic gates; Receivers; Resistance; Threshold voltage; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference Dresden (SCD), 2011

Conference_Location

Dresden

Print_ISBN

978-1-4577-0431-4

Type

conf

DOI

10.1109/SCD.2011.6068709

Filename

6068709