Title :
Another way to investigate the characteristics of time-dependent dielectric breakdown of ultra-thin oxides
Author :
Mu, Fuchen ; Xu, Mingzhen ; Tan, Changhua ; Duan, Xiaorong
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
Comparing the characteristics of gate voltage shift (delta Vgw) to time-dependent dielectric breakdown (i.e., TDDB), it is shown that both gate voltage shift (delta Vgw) and TDDB are of a single mode in Weibull distribution, field acceleration factor and thermal activation energy are similar. Qualitatively, gate voltage shift and TDDB are caused by the same mechanism. Thus, the characteristics of TDDB can be manifested by the characteristics of Vgw degradation. The extrapolated lifetime from "E" model is more reasonable than that from "1/E" model. Like the lifetime extrapolation for TDDB, "1/E" model significantly overestimates the oxide lifetime.
Keywords :
MOSFET; Weibull distribution; extrapolation; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; 1/E model; E model; MOSFETs; Weibull distribution; extrapolated lifetime; field acceleration factor; gate voltage shift; thermal activation energy; time-dependent dielectric breakdown; ultra-thin oxides; Acceleration; Degradation; Dielectric breakdown; Electric breakdown; Life estimation; MOSFET circuits; Shape; Testing; Voltage; Weibull distribution;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982067
