Another way to investigate the characteristics of time-dependent dielectric breakdown of ultra-thin oxides

Author

Mu, Fuchen ; Xu, Mingzhen ; Tan, Changhua ; Duan, Xiaorong

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

1010

Abstract

Comparing the characteristics of gate voltage shift (delta V_gw) to time-dependent dielectric breakdown (i.e., TDDB), it is shown that both gate voltage shift (delta V_gw) and TDDB are of a single mode in Weibull distribution, field acceleration factor and thermal activation energy are similar. Qualitatively, gate voltage shift and TDDB are caused by the same mechanism. Thus, the characteristics of TDDB can be manifested by the characteristics of V_gw degradation. The extrapolated lifetime from "E" model is more reasonable than that from "1/E" model. Like the lifetime extrapolation for TDDB, "1/E" model significantly overestimates the oxide lifetime.

Keywords

MOSFET; Weibull distribution; extrapolation; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; 1/E model; E model; MOSFETs; Weibull distribution; extrapolated lifetime; field acceleration factor; gate voltage shift; thermal activation energy; time-dependent dielectric breakdown; ultra-thin oxides; Acceleration; Degradation; Dielectric breakdown; Electric breakdown; Life estimation; MOSFET circuits; Shape; Testing; Voltage; Weibull distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982067

Filename

982067