Nanoanalysis of lanthanum scandate MOS capacitors addressing reliability after local current flow

Author

Hippler, Markus ; Streit, Stephan ; Lehmann, Jan ; Skorupa, Wolfgang ; Helm, Manfred ; Schmidt, Heidemarie ; Lopes, J. Marcelo Jardao ; Schubert, Jürgen ; Mantl, Siegfried ; Huber, Hans-Peter ; Kienberger, Ferry

Author_Institution

HZDR, Inst. fur Ionenstrahlphysik und Materialforschung, Dresden, Germany

fYear

2011

fDate

27-28 Sept. 2011

Firstpage

1

Lastpage

3

Abstract

The capacitance of series LaScO₃-SiO₂ capacitors on Si substrates has been investigated in the same DC bias range and at the same operation frequencies by admittance and scanning microwave microscopy (SMM) measurements on the 10^-3 cm² scale and 10² nm² scale, respectively. By SMM measurements it is shown that changes in the series capacitance due to local current flows persist and that such nanoscale changes can be induced by slow speed SMM scans at a constant DC bias.

Keywords

MOS capacitors; lanthanum compounds; nanotechnology; reliability; scandium compounds; silicon; LaScO₃-SiO₂; lanthanum scandate MOS capacitors; local current flows; nanoanalysis; reliability; scanning microwave microscopy; series capacitance; Capacitance; Capacitance measurement; Films; Frequency dependence; Frequency measurement; Microwave measurements; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference Dresden (SCD), 2011

Conference_Location

Dresden

Print_ISBN

978-1-4577-0431-4

Type

conf

DOI

10.1109/SCD.2011.6068712

Filename

6068712