SCR memory cell modeling and characterization

Author

Bechdolt, Bob ; Grubisich, Michael ; Foerstner, Juergen

Author_Institution

Digital Equipment Corp., Cupertino, CA, USA

fYear

1989

fDate

18-19 Sep 1989

Firstpage

209

Lastpage

212

Abstract

Modeling and characterization of DC and AC properties of the SCR memory cell are described. Methods of modeling charge storage in saturated devices using primarily active devices are discussed. The methods allow individual component evaluation, so that performance-limiting parameters, device sensitivity, and the effects of scaling can be determined. The models are shown to be in good agreement with measured results on memory cells. Data on a 4 K self-timed RAM, which is fabricated on the MOSAIC 3 process, are presented and shown to be in good agreement with SPICE performance projections

Keywords

bipolar integrated circuits; integrated memory circuits; random-access storage; semiconductor device models; thyristors; 4 kbit; AC properties; DC properties; MOSAIC 3 process; SCR memory cell; SPICE performance projections; characterization; device sensitivity; effects of scaling; modeling; modeling charge storage; performance-limiting parameters; saturated devices; self-timed RAM; Circuits; Equations; Implants; Radiative recombination; Random access memory; Read-write memory; SPICE; Spontaneous emission; Substrates; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989

Conference_Location

Minneapolis, MN

Type

conf

DOI

10.1109/BIPOL.1989.69493

Filename

69493