• DocumentCode
    2218178
  • Title

    Extraction of parasitic parameters of dummy devices on different silicon substrates

  • Author

    Chen, L.P. ; Ho, Y.P. ; Lin, D.C. ; Tseng, B.M. ; Lee, H.Y. ; Guan, R.F. ; Huang, G.W. ; Chen, Y.C. ; Wen, W.Y. ; Chen, C.L.

  • Author_Institution
    Nat. Nano Device Labs., Hsinchu, Taiwan
  • fYear
    1998
  • fDate
    11-8 June 1998
  • Firstpage
    321
  • Lastpage
    324
  • Abstract
    S-parameters of dummy devices fabricated on Si substrates with different resistivities are measured and analyzed to study the effects of substrate resistivity on the microwave characteristics. An equivalent parasitic circuit model is proposed and the extraction procedure also developed. The substrate resistivity effects can be explained well by the proposed model.
  • Keywords
    CMOS integrated circuits; MMIC; S-parameters; UHF integrated circuits; electrical resistivity; equivalent circuits; integrated circuit modelling; silicon; substrates; S-parameters; SHF; Si; Si substrates; UHF; dummy devices; equivalent parasitic circuit model; microwave characteristics; parasitic parameters extraction; substrate resistivity; CMOS technology; Conductivity; Electrical resistance measurement; Frequency; Integrated circuit measurements; Laboratories; Parasitic capacitance; Scattering parameters; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE
  • Conference_Location
    Baltimore, MD, USA
  • ISSN
    1097-2633
  • Print_ISBN
    0-7803-4439-1
  • Type

    conf

  • DOI
    10.1109/RFIC.1998.682343
  • Filename
    682343
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2218178