Title :
A DC to 30GHz ultra-wideband CMOS T/R switch
Author :
Mou Shouxian ; Kaixue, Ma ; Seng, Yeo Kiat ; Thangarasu, Bharatha Kumar ; Mahalingam, Nagarajan
Author_Institution :
Circuits & Syst. Div., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
A differential low-cost T/R switch based on a 0.18μm SiGe BiCMOS process with only CMOS components is developed. The proposed switch achieves an ultra-wide bandwidth of 30GHz. For single-end SPDT applications, the switch has 1.5dB to 3.3dB insertion loss and 20dB to 80dB isolation. Input/output matching has been realized from DC to 40GHz. The switch requires no biasing voltage except the 1.8V voltage supply and ground potentials, which greatly enhances its application feasibility. The switch also has a compact chip area of 0.025mm2 (for SPDT) and 0.05mm2 for differential SPDT applications.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; semiconductor switches; silicon compounds; ultra wideband technology; SiGe; SiGe BiCMOS process; bandwidth 30 GHz; differential low-cost T/R switch; single-end SPDT applications; size 0.18 mum; ultra-wideband CMOS T/R switch; voltage 1.8 V; CMOS integrated circuits; Impedance matching; Insertion loss; MOSFETs; Switches; Switching circuits; CMOS; RFIC; SPDT; SiGe; switch; ultra-wideband;
Conference_Titel :
Semiconductor Conference Dresden (SCD), 2011
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0431-4
DOI :
10.1109/SCD.2011.6068715
