SEM investigation on IGBT latch-up failure

Author

Wu, Wuchen ; Fan, Changyong ; Wang, Yajie ; Wang, Yangang ; Cui, Xueqing ; Jacob, Peter ; Held, Marcel

Author_Institution

Electron. Eng. Dept., Beijing Polytech. Univ., China

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

1040

Abstract

Latch-up failure is one of the most important failure phenomena of IGBT modules because of the p-n-p-n sandwich device structure. Half-bridge IGBT modules latch-up failure was observed by a switching test. The SEM technique was employed in the failure analysis work in order to investigate how the module was destroyed by latching-up. This paper reports the failure analysis results and the relevant analysis techniques used in the work.

Keywords

failure analysis; insulated gate bipolar transistors; power semiconductor switches; scanning electron microscopy; semiconductor device reliability; semiconductor device testing; IGBT latch-up failure; SEM investigation; failure analysis; failure phenomena; half-bridge IGBT modules; p-n-p-n sandwich device structure; parasitic thyristor effect; reliability problems; switching test; Bonding; Circuit testing; Failure analysis; Insulated gate bipolar transistors; Scanning electron microscopy; Silicon carbide; Switching circuits; Thyristors; Voltage; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982074

Filename

982074