Low-frequency noise in narrow channel MOSFETs

Author

Shi, Y. ; Yuan, X.L. ; Gu, S.L. ; Han, P. ; Zhang, Rongting ; Zheng, You Dou

Author_Institution

Dept. of Phys., Nanjing Univ., China

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

1051

Abstract

The characteristics of low-frequency (LF) noise in n-metal oxide semiconductor field effect transistors (n-MOSFET) with ultra-narrow channels have been investigated. LF noise spectra having both 1/fⁿ and Lorentzian type are found separately in the same narrow channel at different gate bias voltage, while only 1/fⁿ noise is observed in relative wide channels. Furthermore, random telegraph signals (RTSs) with very large amplitude are observed in the devices with narrow channels at room temperature. The observations strongly suggest that LF noise in weak inversion dominantly suffer from carrier mobility fluctuation rather than carrier number fluctuation in narrow channels.

Keywords

MOSFET; carrier mobility; semiconductor device measurement; semiconductor device noise; 300 K; LF noise spectra; RTS; carrier mobility fluctuation; low-frequency noise; n-MOSFET; n-metal oxide semiconductor field effect transistors; narrow channel MOSFETs; random telegraph signals; weak inversion; Electron traps; Fluctuations; Frequency; Low-frequency noise; MOSFET circuits; Oxidation; Semiconductor device noise; Shape; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982077

Filename

982077