Title :
A novel technique for effectively determining SiGe film growth rates
Author :
Brabant, Paul ; Wen, Jianqing ; Italiano, Joe
Author_Institution :
ASM America Inc., Phoenix, AZ, USA
Abstract :
SiGe BiCMOS is forecasted to become the technology of choice to address the exploding wireless telecommunications market. Introduction of small amounts of Ge in the base of a bipolar transistor results in significant improvements in all major figures-of-merit. As well as Ge concentration and doping level control in the base region, it is very important to develop an effective way to control the growth rate in the same region. In this paper, we report a novel epitaxial growth technique for determining blanket SiGe epitaxy film growth. An ASM Epsilon™ 2000 single wafer epitaxy reactor is used for this study. This technique is proven to be fast reliable and cost effective. We also discuss the differences between SiGe films and Si films. The benefits of growing an intrinsic "seed layer" and the substrate effect on the seed layer are also discussed.
Keywords :
Ge-Si alloys; chemical vapour deposition; heterojunction bipolar transistors; reflectometry; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; vapour phase epitaxial growth; ASM Epsilon 2000 single wafer epitaxy reactor; Ge concentration control; GeH4; GeH4 chemistry; SIMS measurement; SiGe; SiGe BiCMOS; SiGe HBT structure; SiH4; SiH4 chemistry; bipolar transistor; blanket epitaxy film growth rates; doping level control; growth rate control; intrinsic seed layer; reflectometer; substrate effect; BiCMOS integrated circuits; Bipolar transistors; Doping; Economic forecasting; Epitaxial growth; Germanium silicon alloys; Level control; Semiconductor films; Silicon germanium; Technology forecasting;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982079
