Title :
Thermal analysis of InGaAs/AlGaAs quantum well lasers diode by atomic force microscope (AFM)
Author :
Guo, Weiling ; Yin, Tao ; Lian, Peng ; Liu, Ying ; Gao, Guo ; Zou, Deshu ; Shen, Guangdi ; Chen, Haoming
Author_Institution :
Dept. of Electr. Eng., Beijing Polytech. Univ., China
Abstract :
In this paper, a 4 μm ridge waveguide 980 nm InGaAs/AlGaAs quantum well laser diode is fabricated. It shows excellent optical and electrical characteristics. The output power is 68 mW with a threshold current of 35 mA. The far-field pattern shows fundamental transverse mode operation. Thermal properties of the diodes are presented by atomic force microscope (AFM) images. They clearly show the filling layer of SiO2 near the ridge and that the active layer is the more thermal area in the cavity surface. The optical and electrical properties of 100 μm wide stripe laser diodes are studied and thermal analysis is performed through the threshold current density at different operation temperatures.
Keywords :
III-V semiconductors; aluminium compounds; atomic force microscopy; current density; gallium arsenide; indium compounds; laser cavity resonators; quantum well lasers; semiconductor quantum wells; thermal analysis; waveguide lasers; 100 mm; 35 mA; 4 micron; 68 mW; 980 nm; AFM; InGaAs-AlGaAs; InGaAs/AlGaAs ridge waveguide quantum well laser diode; SiO2; SiO2 filling layer; active layer; atomic force microscope; cavity surface; electrical characteristics; far-field pattern; fundamental transverse mode operation; operation temperature; optical characteristics; output power; thermal analysis; threshold current; threshold current density; Atom optics; Atomic beams; Atomic force microscopy; Diode lasers; Electric variables; Indium gallium arsenide; Optical waveguides; Power generation; Thermal force; Threshold current;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982081
