Title :
Investigation on properties of Focused Ion Beam Enhanced Etching
Author :
Suhua, Jiang ; Jingfeng, Ni ; Jiaji, Wang
Author_Institution :
Nat. Microanalysis Center, Fudan Univ., Shanghai, China
Abstract :
Focused Ion Beam (FIB), an advanced technology combining microanalysis with microprocessing, plays an important role in modern IC design and manufacturing. Enhanced Etching (EE) is one of the main functions of FIB. In this paper, the fundamental properties such as etching rate and crater topography on different materials or under different ion currents are studied. The results are also compared with the data and micrographs of physical sputtering etching in the same condition. The difference is fully discussed. It is meaningful to practical work and research.
Keywords :
focused ion beam technology; sputter etching; IC manufacturing; crater topography; focused ion beam enhanced etching; sputter etching; Electrons; Fabrication; Failure analysis; Focusing; Ion beams; Manufacturing processes; Metal-insulator structures; Sputter etching; Sputtering; Substrates;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982088
