Improvement of low-frequency noise characteristics of n-MOSFETs using backsurface argon-ion bombardment

Author

Mei-Qian, Huang ; Guan-Qi, Li ; Bin, Li ; Shao-Hong, Zeng ; Lai, Peter

Author_Institution

Dept. of Appl. Phys., South China Univ. of Technol., Guangzhou, China

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

1095

Abstract

A low-energy (550 eV) argon-ion beam with 0.5 mA/cm² of current density was used to bombard the backsurface of polycrystalline-silicon-gate MOSFETs with various channel dimensions and MOS capacitors after the completion of all conventional processing steps. The low-frequency noise characteristics of the MOSFETs were investigated. The results showed that the 1/f noise in the linear region and the saturation region can be clearly decreased.

Keywords

1/f noise; MOSFET; carrier mobility; interface states; ion beam effects; semiconductor device noise; 1/f noise; 550 eV; MOS capacitors; Si; backsurface Ar-ion bombardment; channel dimensions; current density; effective inversion layer carrier mobility; fixed charge densities; interface-state densities; linear region; low-energy argon-ion beam; low-frequency noise characteristics; n-MOSFETs; polysilicon-gate MOSFETs; saturation region; Bipolar transistors; Circuit noise; Degradation; Diodes; Fluctuations; Frequency; Low-frequency noise; MOS capacitors; MOSFET circuits; Semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982089

Filename

982089