Study on the deep energy levels in neutron-irradiated Czochralski-grown silicon

Author

Liu, Caichi ; Hao, Qiuyan ; Wang, Haiyun ; Ren, Bingyan ; Li, Yangxian ; Xu, Yuesheng

Author_Institution

Inst. of Inf. Function Mater., Hebei Univ. of Technol., Tianjin, China

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

1099

Abstract

Czochralski-grown crystal silicon (CZSi) was doped by neutron transmutation. The deep energy levels after heat treatment of neutron transmutation doped Czochralski-grown silicon (NTDCZSi) were investigated by photo-induced transient spectroscopy (PITS) and deep level transient spectroscopy (DLTS). The interstitial oxygen concentration and substitutional carbon concentration were measured by Fourier transfer infrared spectrometry (FTIR). The experimental results showed that there are seven deep levels in the band gap of silicon caused by neutron irradiation. The defect centers corresponding to these deep levels were also deduced. The formation and decomposition of these defects during annealing were discussed.

Keywords

Fourier transform spectra; annealing; crystal growth from melt; deep level transient spectroscopy; defect absorption spectra; defect states; elemental semiconductors; infrared spectra; neutron effects; semiconductor doping; silicon; Fourier transfer infrared spectrometry; Si:C; Si:O; annealing; deep energy levels; deep level transient spectroscopy; defect centers; heat treatment; interstitial O concentration; neutron transmutation doping; neutron-irradiated Czochralski-grown Si; photo-induced transient spectroscopy; substitutional C concentration; Annealing; Doping; Energy states; Heat treatment; Infrared spectra; Neutrons; Silicon; Spectroscopy; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982090

Filename

982090